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PD - 94018A
HEXFET(R) POWER MOSFET THRU-HOLE (TO-257AA)
IRL5Y024CM 55V, N-CHANNEL
Product Summary
Part Number
IRL5Y024CM BVDSS
55V
RDS(on) 0.069
ID 17A
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 17 11 68 35 0.28 16 49 11 3.5 4.0 -55 to 150 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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10/27/00
IRL5Y024CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State
Min
55 -- -- -- -- 1.0 6.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.06 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.069 0.085 0.109 2.0 -- 25 250 100 -100 15 3.7 8.5 11 133 25 66 -- V V/C
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 11A VGS = 5.0V, ID = 11A VGS = 4.0V, ID = 9.0A VDS = VGS, ID = 250A VDS = 25V, IDS = 11A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 16V VGS = -16V VGS =5.0V, ID = 11A VDS = 44V VDD = 28V, ID = 11A, VGS =5.0V, RG = 12
V S( ) A
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
520 140 57
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 17 68 1.3 70 120
Test Conditions
A
V ns nC Tj = 25C, IS = 11A, VGS = 0V Tj = 25C, IF = 11A, di/dt 100A/s VDD 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 3.57
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRL5Y024CM
100
VGS 15V 12V 10V 8.0V 5.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
VGS 15V 12V 10V 8.0V 5.0V 4.0V 3.0V BOTTOM 2.5V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
2.5V
1
1
2.5V
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 25 C TJ = 150 C
2.5
ID = 17A
I D , Drain-to-Source Current (A)
2.0
1.5
10
1.0
0.5
1 2 4 6
15
V DS = 15V 20s PULSE WIDTH 8 10 12
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRL5Y024CM
1000
800
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 11A
12
C, Capacitance (pF)
VDS = 44V VDS = 27V VDS = 11V
600
C iss
9
400
6
C oss
200
3
C rss
0 1 10 100
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 13
12 16 20
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
TJ = 150 C
10
TJ = 25 C
ID, Drain-to-Source Current (A)
100
10
100s 1ms
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRL5Y024CM
20
VDS VGS
RD
16
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
12
5.0V
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5Y024CM
100
EAS , Single Pulse Avalanche Energy (mJ)
15V
80
TOP BOTTOM ID 5.0A 7.0A 11A
VDS
L
D R IV E R
60
RG
D .U .T.
IA S
+ - VD D
A
40
5.0V 20V
tp
0 .01
20
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL5Y024CM
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.8mH Peak IAS = 11A, RG= 25
ISD 11A, di/dt 222 A/s, Pulse width 400 s; Duty Cycle 2%
VDD 55V, TJ 150C
Case Outline and Dimensions -- TO-257AA
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